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  Datasheet File OCR Text:
 SHINDENGEN
Schottky Rectifiers (SBD)
Single
D5S4M
40V 5A
FEATURES
OUTLINE DIMENSIONS
Case : ITO-220 Unit : mm
*oe Tj150*Z
*oe PRRSM avalanche guaranteed
*oe Fully Isolated Molding APPLICATION *oe Switching power supply *oe DC/DC converter *oe Home Appliances, Office Equipment *oe Telecommunication
RATINGS
*oeAbsolute Maximum Ratings (If not specified T =25*Z) Item Symbol Conditions Ratings Storage Temperature Tstg -40*150 Operating Junction Temperature Tj 150 Maximum Reverse Voltage VRM 40 Repetitive Peak Surge Reverse VoltagePulse width 0.5ms, duty1/40 V RRSM 45 Average Rectified Forward Current 50Hz sine wave,R-load, Tc=131*Z IO 5 Peak Surge Forward Current IFSM 50Hz sine wave,Non-repetitive 1 cycle peak value, Tj=125*Z 100 Repetitive Peak Surge Reverse Power Pulse width 10Es, Tj=25*Z PRRSM 330 Dielectric Strength Vdis Terminals to case, AC 1 minute 1.5 Mounting Torque TOR (Recommended torque*0.3Nm) F 0.5 *oeElectrical Characteristics (If not specified T =25*Z) Item Symbol Conditions Forward Voltage VF IF =5A, Pulse measurement Reverse Current IR V=V , Pulse measurement R RM Junction Capacitance Cj f=1MHz, =10V RV Thermal Resistance AEjc junction to case AEcf case to heatsink Unit *Z *Z V V A A W kV Nm
Ratings Unit Max.0.55 V Max. 3.5 mA Typ.180 pF Max.4.5 *Z/W Max.1.5
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
D5S4M
Forward Voltage
10
Forward Current IF [A]
Tc=150C [MAX] Tc=150C [TYP] Tc=25C [MAX] Tc=25C [TYP] 1
Pulse measurement per diode
0.1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
Forward Voltage VF [V]
D5S4M
Junction Capacitance
f=1MHz Tc=25C TYP per diode
1000
Junction Capacitance Cj [pF]
100
0.1
1
10
Reverse Voltage VR [V]
D5S4M
1000
Reverse Current
Tc=150C [MAX]
100
Tc=150C [TYP]
Reverse Current IR [mA]
Tc=125C [TYP] 10 Tc=100C [TYP]
1
Tc=75C [TYP]
0.1
Pulse measurement per diode
0.01
0
5
10
15
20
25
30
35
40
Reverse Voltage VR [V]
D5S4M
10
Reverse Power Dissipation
DC
Reverse Power Dissipation PR [W]
8
D=0.05 0.1 0.2
6
0.3
4
0.5
2
SIN 0.8
0
0
10
20
30
40
50
Reverse Voltage VR [V]
Tj = 150C
0 VR tp D=tp /T T
D5S4M
6
Forward Power Dissipation
Forward Power Dissipation PF [W]
5 DC D=0.8 4 0.2 0.05 2 0.1 0.3 SIN 0.5
3
1
0
0
1
2
3
4
5
6
7
8
Average Rectified Forward Current IO [A]
Tj = 150C IO 0 tp D=tp /T T
D5S4M
10
Derating Curve
Average Rectified Forward Current IO [A]
8
DC D=0.8
6
0.5 SIN 0.3
4
0.2 0.1
2
0.05
0
0
20
40
60
80
100
120
140
160
Case Temperature Tc [C]
VR = 20V 0 0
IO
VR tp D=tp /T T
D5S4M
200
Peak Surge Forward Capability
IFSM
10ms 10ms
1 cycle
Peak Surge Forward Current IFSM [A]
150
non-repetitive, sine wave, Tj=125C before surge current is applied
100
50
0
1
2
5
10
20
50
100
Number of Cycles [cycles]
SBD
120
Repetitive Surge Reverse Power Derating Curve
100
PRRSM Derating [%]
80
60
40
20
0
0
50
100
150
Junction Temperature Tj [C]
IRP IR 0.5IRP 0 tp PRRSM = IRP x VRP VR VRP
SBD
10
Repetitive Surge Reverse Power Capability
PRRSM p) / PRRSM p=10s) Ratio (t (t
1
0.1
1
10
100
Pulse Width t p [s]
IRP IR 0.5IRP 0 tp PRRSM = IRP x VRP VR VRP


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